Communications of the ACM
IBM, Samsung Unveil Vertical Transistor Architecture
The VTFET architecture demonstrates a path to continue scaling beyond nanosheet technology in CMOS semiconductor design, IBM says.
Credit: IBM
IBM and Samsung Electronics claimed a breakthrough in semiconductor design based on a new architecture touted as enabling an 85-percent reduction in power consumption.
The partners said the Vertical Transport Field-Effect Transistors (VTFET) design offers greater power efficiency over FinFET designs, potentially extending Moore's Law scaling beyond current two-dimensional nanosheet thresholds.
Unlike FinFETs, which are generally designed to lie flat atop a wafer to allow electric currents to flow horizontally, the companies say VTFETs are situated perpendicular to a chip substrate, allowing electric currents to flow vertically. The companies claim the design could, for example, extend smartphone battery life beyond a week without recharging, according to IBM's announcement.
It's unclear is when VTFET technology will become commercially available.
From EE Times
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