Communications of the ACM
A Kaist Research Team Has Developed a Fully Functional Flexible Memory
Korea Advanced Institute of Science and Technology researchers have developed a fully functional and flexible non-volatile resistive random access memory (RRAM) in which a memory cell can be randomly accessed, written, and erased on a plastic substrate.
The researchers, led by professor Keon Jae Lee, note that their RRAM technology is not affected by cell-to-cell interference. The researchers say they solved the cell-to-cell interference problem by combining a memristor with a high-performance single-crystal silicon transistor on flexible substrates.
The combination of the two advanced technologies enabled the researchers to develop memory functions in a matrix memory array. "This result represents an exciting technology with the strong potential to realize all flexible electronic systems for the development of a freely bendable and attachable computer in the near future," Lee says.
From KAIST
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