Communications of the ACM
Graphene Transistor Method Could Enable Fast Devices
The researchers' demonstration enabled self-aligned graphene transistors with cutoff frequency greater than 400 GHz the highest to date.
Credit: UCLA
University of California, Los Angeles researchers have developed a scalable method for fabricating self-aligned graphene transistors that could lead to high-speed carbon electronics.
The manufacture of self-aligned graphene transistors is a challenge using conventional fabrication techniques because a single graphene sheet conducts charge so well and it is difficult to make the current stop. Production of high-performance graphene often leads to damage in the graphene lattice's shape and performance, which results in problems that include parasitic capacitance and serial resistance.
The team performed the conventional lithography, deposition, and etching steps on a sacrificial substrate before integrating it with large-area graphene through a physical transferring process. The researchers say their damage-free transfer process and self-aligned device structure enabled self-aligned graphene transistors with the highest cutoff frequency to date. "Our study defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra-high-frequency circuits," the researchers say.
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