Communications of the ACM
New Innovation by NS Researchers Enhances Information Storage in Electronics
Researchers say magnetoresistive random access memory can boost information storage in electronic devices.
Credit: Shutterstock
National University of Singapore (NUS) researchers say they have developed magnetoresistive random access memory (MRAM) technology that can boost information storage in electronic systems.
The researchers developed a new device structure useful for the next-generation MRAM chips, which they say could be applied to enhance the user experience in consumer electronics.
"Storage space will increase, and memory will be so enhanced that there is no need to regularly hit the 'save' button as fresh data will stay intact even in the case of a power failure," says NUS researcher Yang Hyunsoo.
The researchers say the technology could change the architecture of computers, making them much easier to manufacture.
Traditional methods of applying MRAM revolve around the technology that uses an in-plane current-induced magnetization. However, this method is challenging to implement because it includes the use of ultra-thin ferromagnetic structures. The NUS researchers solved this problem by incorporating magnetic multilayer structures as thick as 20 nanometers, providing an alternative film structure for transmitting electronic data and storage.
From National University of Singapore
View Full Article
Abstracts Copyright © 2014 Information Inc., Bethesda, Maryland, USA
No entries found