Communications of the ACM
2d Transistors Promise a Faster Electronics Future
Lawrence Berkeley National Laboratory researchers fabricated the first fully 2D field-effect transistor from layers of molybdenum disulfide, hexagonal boron nitride and graphene held together by van der Waals bonding.
Credit: Lawrence Berkeley National Laboratory
Lawrence Berkeley National Laboratory researchers say they have developed the world's first fully two-dimensional field-effect transistor (FET). The researchers say the new FETs are better than conventional silicon-based FETs because they suffer no performance drop-off under high voltages and provide high electron mobility, even when scaled to a monolayer in thickness.
The new FETs were developed using layers of a transition metal, dichalcogenide molybdenum disulfide, hexagonal boron nitride, and graphene stacked via van der Waals interactions.
"Our work represents an important stepping stone towards the realization of a new class of electronic devices in which interfaces based on van der Waals interactions rather than covalent bonding provide an unprecedented degree of control in material engineering and device exploration," says University of California, Berkeley professor Ali Javey. He notes the results indicate the potential of using an all-layered material system for future electronic applications.
The transition metal dichalcogenide molybdenum disulfide serves as the electron-carrying channel, the hexagonal boron nitride acts as the gate insulator, and the graphene functions as the source, drain, and gate electrodes. All of the materials are single crystals held together by van der Waals bonding.
In the future, the researchers will try to grow the heterogeneous layers directly on a substrate.
From Lawrence Berkeley National Laboratory
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