Communications of the ACM
Electronic Device Performance Enhanced With New Transistor Encasing Method
Researchers at the University of Illinois say they have developed a more effective method of closing gaps in atomically small wires.
Credit: Joseph Lyding
University of Illinois researchers say they have developed a more effective method for closing gaps in atomically small wires, a breakthrough that could lead to new transistor technology.
Carbon nanotubes, which have the potential to replace silicon transistors because they can operate 10 times as fast and are more flexible, have highly resistive connections, resulting in resistance that slows the operation of the transistor. The researchers' new technique involves applying a thin layer of solution, made from compounds that contain the metal needed to solder the junctions together, which stops energy loss in the form of heat.
"Our new technique is much simpler," says Illinois researcher Jae Won Do. "It involves fewer steps and it's more compatible to existing technology." He notes the new method is transferable to the current equipment silicon transistor manufacturers are using.
"With this method, you just send current through the nanotubes and that heats the junctions," says Illinois professor Joseph Lyding. "From there, chemistry occurs inside that layer, and then we're done. You just have to rinse it off."
The researchers next want to examine compounds for the junctions that help to amplify the current even more. "We're advancing this work as we speak, with chemicals that have been synthesized specifically for speed," Lyding notes.
From University of Illinois News Bureau
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