Researchers at the U.S. Department of Energy's Ames Laboratory have successfully manipulated the electronic structure of graphene, which may facilitate the manufacture of graphene transistors that will be faster and more dependable than their silicon-based counterparts.
The scientists hypothetically calculated the mechanism by which graphene's electronic band structure could be tweaked with metal atoms.
The work will experimentally direct the use of the effect in layers of graphene with rare-earth metal ions intercalated between graphene and its silicon carbide substrate.
The metal atoms' magnetic properties means the additions also can modify the use of graphene for spintronics.
"Ames Laboratory is very good at synthesis of materials, and we use theory to precisely determine how to modify the metal atoms," says Ames researcher Minsung Kim. "Our calculations guided the placement so that we can manipulate these quantum properties to behave the way we want them to."
From Ames Laboratory
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