Communications of the ACM
Wavy Transistors That Vertically Gain Width Without Increasing Their On-Chip Footprint For Future Flexible Displays
Researchers in Saudi Arabia say they have developed a transistor architecture that improves the performance of display circuitry in next-generation mobile electronics.
Credit: Muhammad M. Hussain
Researchers at King Abdullah University of Science and Technology (KAUST) in Saudi Arabia say they have developed a unique transistor architecture that improves the performance of the display circuitry in next-generation mobile electronics that are likely to have flexible ultra-high-resolution displays.
Amorphous-oxide semiconductors such as zinc oxide and indium-gallium zinc oxide have provided transistor channels with limited mobility, and researchers have tried scaling down these transistors, usually leading to short-channel effects that increase power consumption and decrease performance. The KAUST researchers solved this problem by designing non-planar vertical semiconductor fin-like structures that are laterally interconnected to form wavy transistor arrays.
The team used zinc oxide as the active channel material and generated the wavy architecture on a silicon substrate, then transferred it onto a flexible soft polymer support using a low-temperature process.
In a proof-of-concept experiment, the researchers found they could drive flexible light-emitting diodes at twice the output power of conventional systems.
From King Abdullah University of Science and Technology
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Abstracts Copyright © 2018 Information Inc., Bethesda, Maryland, USA
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