University of Rochester researchers have developed a technique for stressing a 2D memristor to produce the fastest switching speed and lowest operating energy.
The memristor hovered between its high-resistance semiconducting phase and its low-resistance semimetal phase when a controlled amount of strain was placed on the 2D film.
Rochester's Stephen Wu said, "You get stresses and strains built up in the wafer anyway, so you can zero everything out, or you could just put it to use and it actually enhances your device."
From IEEE Spectrum
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